Fabry-Perot Ultra-Low-Loss(tanδ<0.0001) 4H-SiC (110 – 170 GHz)

Measurement Results

Key Point!

• The higher the frequency, and the lower the material loss, the more challenging the measurement becomes.
• With EM Lab’s Fabry-Perot resonator, even ultra-low loss materials with loss tangent (Df) below 10⁻⁴ can be reliably measured in the 110–170 GHz range!

Silicon carbide (SiC) has long been assumed to exhibit low loss, yet no reliable measurement data had been available—until now. EM Lab presented groundbreaking SiC measurement data using its Fabry-Perot resonator at IMS/ARFTG 2024, drawing global attention. Our research partners at Cornell University also published related studies in the IEEE Journal of Microwaves and Applied Physics Letters.

The data compares the dielectric constant (Dk) and loss tangent (Df) of silicon carbide, sapphire, and fused silica. The results clearly demonstrate that silicon carbide surpasses sapphire in low-loss performance.

This discovery was made possible by EM labs' Fabry-Perot resonator—capable of stable and precise measurements of materials with Df values below 10⁻⁴, even in the extremely high frequency range of 110–170 GHz.