Examples

Ultra-Low-Loss SiC Wafer Measurement with Fabry-Perot Resonator (110 - 170 GHz)

Measurement Results

Fabry-Perot resonator measurement of SiC wafer, sapphire, and fused silica from 110 to 170 GHz, Dk frequency characteristics.
Fabry-Perot resonator measurement of ultra-low-loss SiC wafer, sapphire, and fused silica from 110 to 170 GHz, Df frequency characteristics.

Key Point!

  • Measurement becomes more difficult as frequency increases and material loss decreases.
  • With EM labs Fabry-Perot resonators, even materials with dielectric loss tangent (Df) below 1e-4 can be evaluated stably from 110 to 170 GHz.

Silicon carbide (SiC) had been expected to be a low-loss material, but reliable measured data had not been available. EM labs presented SiC measurement data using a Fabry-Perot resonator at IMS/ARFTG 2024, attracting strong attention. Related papers from our collaborators at Cornell University have also been accepted by IEEE Journal of Microwaves and Applied Physics Letters. The data compare the dielectric constant (Dk) and dielectric loss tangent (Df) of silicon carbide, sapphire, and fused silica. The results clearly show that silicon carbide has lower-loss characteristics than sapphire. This discovery was made possible by EM labs Fabry-Perot resonators, which can stably measure low-loss data below 1e-4 at high frequencies from 110 to 170 GHz.

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System Configuration

  • Fabry-Perot Resonator D-band: FP-D
  • Measurement software for Fabry-Perot resonator: FP-MA
  • Network analyzer: N5290A (Keysight Technologies)
  • Mini VNAX frequency extender module: N5262BW06 (Keysight Technologies)

Measured Samples

  • Fused silica, 173 um
  • Silicon carbide, 98 um
  • Sapphire, 306 um

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